规格：漏源电压, Vds 100V,
INFINEON
场效应管, MOSFET, N沟道, 100V, 140A D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 18 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N通道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 540 mohm, 5 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 100 V, 11 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 32 A, 100 V, 30 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.047 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.073 ohm, 10 V, 2 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 100V, 14A, TO-220
(EN)
