规格：漏源电压, Vds 100V,
INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.115 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 100 V, 48 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.7 A, 100 V, 180 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.2 A, 100 V, 0.0081 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0294 ohm, 10 V, 3.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.0083 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 130 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 11.5 A, 100 V, 0.096 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.034 ohm, 10 V, 1.7 V
(EN)
