规格：漏源电压, Vds 100V,
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 49 A, 100 V, 0.0168 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0105 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 100 V, 0.0165 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.044 ohm, 4.5 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 56 A, 100 V, 21 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 100V, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 192 A, 100 V, 0.0035 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.031 ohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 12.2 mohm, 10 V, 1.85 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 100 V, 0.019 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0103 ohm, 10 V, 4.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 5 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 160 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V
(EN)
