规格：漏源电压, Vds -100V,
VISHAY
晶体管, MOSFET, P沟道, -16.7 A, -100 V, 0.115 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 13 A, -100 V, 200 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -100V, 40A D2-PAK
(EN)
ROHM
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.085 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, P通道, MOSFET, -100V, 19A D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -3.1A, TO-252-3
(EN)
VISHAY
场效应管, MOSFET, P沟道, -100V, 28A, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 33.5mA, 整卷
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V
(EN)INFINEON
晶体管, 射频FET, -100 V, -15 A, 128 W, TO-252
(EN)
INFINEON
晶体管, MOSFET, P沟道, -14 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 300 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -23 A, -100 V, 0.117 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -680 mA, -100 V, 1.4 ohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
(EN)
