规格：漏源电压, Vds 600V,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 1.8 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-220F
(EN)VISHAY
场效应管, MOSFET, N沟道, 600V, 15A, TO-220F
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 4 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-263-3
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220AB-3
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V 22A TO-220
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220-3
(EN)VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-263-3
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.32 ohm, 10 V, 2.5 V
(EN)TOSHIBA
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.3 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.079 ohm, 10 V, 3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 5 V
(EN)
