规格：漏源电压, Vds 600V,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 2.4A, TO-220FP
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 40 A, 600 V, 0.14 ohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220F
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 50 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 2A, TO-252-3
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.057 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 740 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)
ADVANCED POWER ELECTRONICS CORP
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 5 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 140 mohm, 10 V, 3 V
(EN)
