规格：漏源电压, Vds 80V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 80 V, 0.0172 ohm, 10 V, 2.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, 双N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, PowerTrench, 双N沟道, 66 A, 80 V, 0.0033 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 80 V, 8300 μohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.8 A, 80 V, 16.5 mohm, 10 V, 3.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 24 A, 80 V, 37 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.013 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 15 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 80 V, 0.077 ohm, 10 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 84 A, 80 V, 0.0074 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 80 V, 0.018 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.022 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 80 V, 0.016 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 80 V, 0.025 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 80 V, 0.02 ohm, 10 V, 1.7 V
(EN)
