规格：漏源电压, Vds 80V,
INFINEON
场效应管, MOSFET, N沟道, 80V, 39A, DPAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 11.8 A, 80 V, 0.0824 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 80 V, 16.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 82 A, 80 V, 5.8 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12.5 A, 80 V, 13.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0011 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0021 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.00436 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 80 V, 13.7 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0027 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 76 A, 80 V, 0.0026 ohm, 10 V, 3.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 38 A, 80 V, 29 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0075 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 37 A, 80 V, 0.0205 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V
(EN)
