规格：漏源电压, Vds 80V,
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 80V, 39A, DPAK, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0063 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0095 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 V
(EN)
VISHAY
MOSFET, N CHANNEL, 80V, 40A, TO-252-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 14 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0024 ohm, 10 V, 3.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 150 A, 80 V, 0.0024 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 80 V, 0.001 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 80 V, 0.014 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 80V, 0.0026OHM, 76A, POWER 56-8
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
