规格：漏源电压, Vds 80V,
INFINEON
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 80 V, 0.0096 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0031 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 65 A, 80 V, 0.0092 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 2.7 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 80 V, 0.056 ohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 80 V, 0.056 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 80 V, 0.0191 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.8 A, 80 V, 16.5 mohm, 10 V, 3.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0061 ohm, 10 V, 2.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N通道, 80V, 6.5A, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 45 A, 80 V, 11.5 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.1 mohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 45 A, 80 V, 11.8 mohm, 10 V, 2.8 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 0.061 ohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 0.061 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 80 V, 29 mohm, 10 V, 4 V
(EN)
