规格：漏源电压, Vds 650V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 73 A, 650 V, 0.032 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.15 ohm, 10 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V
(EN)MICROCHIP
功率场效应管, MOSFET, N沟道, 300 mA, 650 V, 8 ohm, 0 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 650V, 11A, TO-220
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V
(EN)
