规格：漏源电压, Vds 60V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 60 V, 16 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 27 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 45A, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 60 V, 16.5 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.037 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 60V, 79A, D2PAK
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.054 ohm, 10 V, 1.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 276 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, 双N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
(EN)
