规格：漏源电压, Vds 60V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 60 V, 14 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 32 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 400 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0026 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 45 A, 60 V, 0.021 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.7 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2200 μohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0078 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 81 A, 60 V, 12 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 1.3 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.052 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 150W, TO-220
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 60 V, 0.0011 ohm, 10 V, 2.9 V
(EN)
