规格：漏源电压, Vds 60V,
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 60 V, 0.7 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100A, 60V, 3.6W
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0061 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 48A TO-220AB
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.0046OHM, 80A, TO-263AB-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 120A, D2PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 65A, TO-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0064 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 0.085 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 60A, D2-PAK
(EN)
ROHM
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.21 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
