规格：漏源电压, Vds 60V,
INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0094 ohm, 10 V, 4.9 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 260 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 60 V, 0.0043 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 294 mA, 60 V, 1.19 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道, 60V, 89A, 4-SOT-669
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 60 V, 0.02 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0094 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 130 A, 60 V, 0.00294 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, ESD保护
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 100 mohm, 10 V, 2.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 5 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
