规格：漏源电压, Vds -60V,
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.18 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -47 A, -60 V, 0.021 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -80 A, -60 V, 0.021 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 12 A, -60 V, 0.11 ohm, -10 V, -4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -18.5 A, -60 V, 0.12 ohm, -5 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.6 A, -60 V, 0.145 ohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -14 A, -60 V, 0.06 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -8 A, -60 V, 0.092 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.2 A, -60 V, 170 mohm, -10 V, -1.6 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, HEXDIP
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.095 ohm, -10 V, -2.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -60 V, 0.125 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET
(EN)
VISHAY
场效应管, P通道, MOSFET, -60V, 19A, TO-252, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 11A, TO-263, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 18.5A, D2-PAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 12A, D-PAK
(EN)
