规格：漏源电压, Vds -60V,
TOSHIBA
晶体管, MOSFET, AEC-Q101, P沟道, -8 A, -60 V, 0.08 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, 60V V(BR)DSS
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -26 A, -60 V, 0.036 ohm, -10 V, -3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, P沟道, -5.2 A, -60 V, 0.034 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.047 ohm, -10 V, -2.6 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.5 A, -60 V, 0.2 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -160 mA, -60 V, 2.1 ohm, -10 V, -1.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -1.9 A, -60 V, 0.239 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 1.45 A, -60 V, 400 mohm, -10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 1.17 A, -60 V, 800 mohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -330 mA, -60 V, 1.4 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -170 mA, -60 V, 8 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
(EN)
