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Silicon Carbide Schottky Diode, thinQ 2G 600V Series, Single, 600 V, 10 A, 24 nC, TO-220

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场效应管, MOSFET, N沟道, 100A, 100V, 3.6W

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晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0033 ohm, 10 V, 2 V

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晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V

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场效应管, MOSFET

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场效应管, MOSFET, N沟道, 65A, 30V, 75W

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晶体管, MOSFET, P沟道, -9.8 A, -30 V, 13.6 mohm, -10 V, -1.9 V

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晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0028 ohm, 10 V, 1 V

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晶体管, MOSFET, N沟道, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V

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单晶体管, IGBT, N通道, 17 A, 2.88 V, 45 W, 600 V, TO-220, 3 引脚

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晶体管, MOSFET, N沟道, 100 A, 100 V, 3.5 mohm, 10 V, 3 V

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MOSFET, P CHANNEL, -30V, -24A, PQFN-8

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晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V

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晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 3 V

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MOSFET, N CHANNEL, 40V, 0.0011OHM, 195A,

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晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V

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场效应管, MOSFET

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晶体管, IGBT, 600V

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单晶体管, IGBT, 80 A, 1.85 V, 428 W, 600 V, TO-247, 3 引脚

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晶体管, MOSFET, N沟道, 27 A, 55 V, 45 mohm, 10 V, 2 V

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单晶体管, IGBT, 20 A, 360 V, 34 W, 360 V, TO-220FP, 3 引脚

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单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 引脚

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场效应管, MOSFET, N沟道, 40V, 195A, TO-263AB-3

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晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0058 ohm, 10 V, 2 V

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场效应管, MOSFET, N沟道, 55V, 75A, D2-PAK