VISHAY

单管二极管 齐纳, 12 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C

NEXPERIA

单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE

NEXPERIA

单管二极管 齐纳, 5.1 V, 250 mW, TO-236AB, 2 %, 3 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

齐纳二极管

ON SEMICONDUCTOR

单管二极管 齐纳, 180 V, 3 W, DO-41 (DO-204AL), 5 %, 2 引脚, 200 °C

ON SEMICONDUCTOR/FAIRCHILD

肖特基整流二极管, 30V, 200mA, SOT-23

INFINEON

晶体管, MOSFET, N沟道, 50 A, 60 V, 6.8 mohm, 10 V, 2.5 V

VISHAY

晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V

VISHAY

单管二极管 齐纳, 3.3 V, 410 mW, SOD-123, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 60V, 12A, TO-220

PANASONIC ELECTRONIC COMPONENTS

肖特基整流器, 30 V, 1.5 A, 单, SOD-123, 2 引脚, 460 mV

INFINEON

晶体管, MOSFET, N沟道, 55 A, 40 V, 0.0059 ohm, 10 V, 1.8 V

MULTICOMP

单管二极管 齐纳, 18 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C

INFINEON

Silicon Carbide Schottky Diode, thinQ 3G 600V Series, Single, 600 V, 4 A, 4.5 nC, TO-252

NEXPERIA

单管二极管 齐纳, 12 V, 400 mW, DO-35, 2 %, 2 引脚, 200 °C

NEXPERIA

双极性晶体管, 中等功率, NPN, 45V, 1A, 3SOT89

VISHAY

晶体管, MOSFET, N沟道, 370 mA, 500 V, 3 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单管二极管 齐纳, 24 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

VISHAY

晶体管, MOSFET, P沟道, 90 A, -100 V, 0.0156 ohm, -10 V, -3 V

VISHAY

双路场效应管, MOSFET, 双P沟道, -1.3 A, -20 V, 0.64 ohm, -1.8 V, -400 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 40 hFE

VISHAY

晶体管, MOSFET, N沟道, 7.7 A, 60 V, 200 mohm, 10 V, 4 V

VISHAY

肖特基整流二极管阵列, 共阴极, 7A, D-PAK

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 20V, 0.00024Ω, 600mA, SC-89-3