ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V

ON SEMICONDUCTOR/FAIRCHILD

二极管 小信号, 单, 75 V, 300 mA, 1 V, 4 ns, 4 A

NEXPERIA

单晶体管 双极, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 200 hFE

NEXPERIA

P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23

INFINEON

晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V

VISHAY

场效应管, MOSFET, P沟道

INFINEON

场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3

NEXPERIA

晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR

肖特基整流器, 单, 60 V, 2 A, DO-214AA, 2 引脚, 630 mV

NEXPERIA

晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V

DIODES INC.

晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V

STMICROELECTRONICS

单晶体管 双极, PNP, 300 V, 15 W, -500 mA, 30 hFE

VISHAY

快速/超快二极管, 单, 200 V, 3 A, 900 mV, 20 ns, 100 A

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV

DIODES INC.

单管二极管 齐纳, 4.3 V, 500 mW, SOD-123, 7 %, 2 引脚, 150 °C

DIODES INC.

单管二极管 齐纳, 18 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C

VISHAY

场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC

VISHAY

齐纳二极管, Vz: 20V

ON SEMICONDUCTOR

单管二极管 齐纳, 8.2 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

VISHAY

晶体管, N沟道, 12A, 20V, 3.5W

VISHAY

晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V

INFINEON

晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V

DIODES INC.

单管二极管 齐纳, 精准, 12 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

INFINEON

晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V