DIODES INC.

单管二极管 齐纳, 3.3 V, 200 mW, SOD-323, 6 %, 2 引脚, 150 °C

VISHAY

晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V

VISHAY

快速/超快功率二极管, 1 kV, 3 A, 单, 1.7 V, 75 ns, 150 A

VISHAY

场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W

DIODES INC.

单晶体管 双极, NPN, 60 V, 150 MHz, 350 mW, 1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, -150 V, 30 MHz, 50 W, -8 A, 40 hFE

NEXPERIA

DIODE, ZENER, 33V, 250mW, SOT-23-3

DIODES INC.

晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V

NEXPERIA

单管二极管 齐纳, 16 V, 500 mW, SOD-323F, 2 %, 2 引脚, 150 °C

DIODES INC.

单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

单管二极管 齐纳, 10 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 18 A, 30 V, 4.2 mohm, 10 V, 2.5 V

DIODES INC.

单管二极管 齐纳, MMSZ52系列, 20 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

PANASONIC ELECTRONIC COMPONENTS

单管二极管 齐纳, 6.8 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C

VISHAY

FAST RECOVERY DIODE, 2A, 50V, DO-214AA

NEXPERIA

单管二极管 齐纳, 6.2 V, 1.5 W, SOT-223, 5 %, 4 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV

INFINEON

晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

NEXPERIA

单晶体管 双极, NPN, 160 V, 250 mW, 300 mA, 80 hFE

INFINEON

晶体管, MOSFET, N沟道, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 V

VISHAY

整流器, 快速, 单路, 1A, 1KV, DO-214AC-2

INFINEON

双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V