
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V

VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V

ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.045 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 3 V, 500 mW, DO-204AH, 5 %, 2 引脚, 200 °C

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 80 mohm, -4.5 V, -700 mV

DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 20.1 A, 30 V, 0.0022 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 330 A, 40 V, 0.0006 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 150 V, 0.015 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 18 A, 30 V, 0.0027 ohm, 10 V, 2.1 V

INFINEON
晶体管, MOSFET, P沟道, 12 A, -55 V, 0.175 ohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -12 V, 40 mohm, -4.5 V, -600 mV

VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 3.6 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 400 V, 4 MHz, 100 W, 12 A, 8 hFE