NEXPERIA

单管二极管 齐纳, 33 V, 400 mW, SOD-323, 2 %, 2 引脚, 150 °C

VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

齐纳二极管

INFINEON

二极管, 碳化硅肖特基, thinQ 3G 600V系列, 双共阴极, 600 V, 5 A, 6 nC, TO-252

VISHAY

场效应管, MOSFET, N沟道

SOLID STATE

单管二极管 齐纳, 30 V, 10 W, DO-4, 5 %, 2 引脚, 175 °C

MULTICOMP

快速/超快二极管, 400 V, 2 A, 单, 1.3 V, 35 ns, 50 A

VISHAY

场效应管, MOSFET, P沟道, -8V, 13.7A, SOIC

DIODES INC.

小信号肖特基二极管, 单, 40 V, 510 mA, 810 mV, 4.2 A, 125 °C

MULTICOMP

单晶体管 双极, 通用, PNP, 45 V, 200 MHz, 600 mW, 200 mA, 120 hFE

NEXPERIA

单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE

MULTICOMP

单管二极管 齐纳, 11 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 250V, 44A, D2-PAK

INFINEON

晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V

ON SEMICONDUCTOR/FAIRCHILD

快速/超快功率二极管, 单, 1.2 kV, 15 A, 3.2 V, 75 ns, 200 A

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V

INFINEON

晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V

VISHAY

晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, TO-220AB

ON SEMICONDUCTOR

单管二极管 齐纳, 通用, 18 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C

INFINEON

晶体管, MOSFET, N沟道, 60 A, 55 V, 11 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV

VISHAY

晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V