
VISHAY
晶体管, MOSFET, P沟道, -3 A, -150 V, 0.073 ohm, -10 V, -4 V

STMICROELECTRONICS
单晶体管, IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247, 3 引脚

VISHAY
场效应管, MOSFET, N沟道, 60V, 7.7A, IPAK

INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0051 ohm, 10 V, 1.9 V

NEXPERIA
晶体管, MOSFET, N沟道, 12.9 A, 60 V, 0.034 ohm, 10 V, 1.7 V

STMICROELECTRONICS
Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC, TO-247

ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 700 mW, 200 mA, 40 hFE, SOT-23

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 40 V, 350 mW, 1.2 A, 10000 hFE

ON SEMICONDUCTOR
快速/超快功率二极管, 双共阴极, 600 V, 4 A, 2.8 V, 35 ns, 100 A

VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V

DIODES INC.
单晶体管 双极, 达林顿, NPN, 120 V, 150 MHz, 1 W, 1 A, 5000 hFE

INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0039 ohm, 10 V, 2.7 V

DIODES INC.
单晶体管 双极, PNP, -80 V, 50 MHz, 300 mW, -500 mA, 100 hFE