NEXPERIA

单晶体管 双极, PNP, -80 V, 100 MHz, 1.35 W, -1 A, 100 hFE

NEXPERIA

单管二极管 齐纳, 3.9 V, 300 mW, SOD-523, 2 %, 2 引脚, 150 °C

INFINEON

晶体管, MOSFET, N沟道, 160 A, 60 V, 3.3 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 41A

STMICROELECTRONICS

Silicon Carbide Schottky Diode, 600V Series, Dual Common Cathode, 600 V, 20 A, 12 nC, TO-247

STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 130 MHz, 1.4 W, 3 A, 80 hFE

INFINEON

晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 18 A, 55 V, 0.06 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 引脚

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00111 ohm, 10 V, 1.7 V

MULTICOMP

单管二极管 齐纳, 8.2 V, 1 W, DO-214AC, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V

VISHAY

标准恢复二极管, 单, 200 V, 3 A, 1.15 V, 2.5 μs, 100 A

MICRO COMMERCIAL COMPONENTS

齐纳二极管, 1.5W, 6.2V, DO-214AC

VISHAY

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V

NEXPERIA

小信号肖特基二极管, 双共阴极, 40 V, 200 mA, 300 mV, 1 A, 125 °C

VISHAY

齐纳二极管, 68V, 300mW, SOT-23

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 160 W, 20 A, 18000 hFE

ON SEMICONDUCTOR/FAIRCHILD

单管二极管 齐纳, 15 V, 200 mW, SOD-323F, 5 %, 2 引脚, 150 °C

MULTICOMP

二极管, 标准恢复, 2A, 400V, DO-214AA-2

VISHAY

快速/超快功率二极管, 单, 600 V, 15 A, 1.8 V, 18 ns, 170 A

NTE ELECTRONICS

快速二极管, 5A, 1KV, DO-27

NEXPERIA

单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.3 W, 1 A, 2000 hFE