STMICROELECTRONICS

二极管 小信号, 100 V, 200 mA, 1 V, 1 A

MULTICOMP

单管二极管 齐纳, 30 V, 200 mW, SOD-323, 2 引脚, 150 °C

BROADCOM LIMITED

二极管, 射频/PIN, 双系列, 1.5 ohm, 200 V, SOT-23, 3引脚, 0.3 pF

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚

VISHAY

晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V

VISHAY

肖特基整流器, 双共阴极, 100 V, 60 A, TO-247, 3 引脚, 640 mV

VISHAY

齐纳二极管, 500MW, 75V, DO-35

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 22 kohm

INFINEON

单晶体管, IGBT, 30 A, 1.7 V, 428 W, 900 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 24 A, 30 V, 0.04 ohm, 10 V, 1 V

ON SEMICONDUCTOR

单管二极管 齐纳, 6.8 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR

单管二极管 齐纳, 180 V, 5 W, 017AA, 5 %, 2 引脚, 200 °C

DIODES INC.

单晶体管 双极, NPN, 80 V, 150 MHz, 1 W, 1 A, 100 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV

DIODES INC.

单晶体管 双极, PNP, 70 V, 160 MHz, 2 W, 2 A, 300 hFE

INFINEON

晶体管, MOSFET, N沟道, 320 A, 40 V, 1.6 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 42 A, 40 V, 5.5 mohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 60 V, 200 W, 30 A, 1000 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 37 A, 30 V, 0.0099 ohm, 10 V, 1.57 V

NEXPERIA

小信号肖特基二极管, 单, 30 V, 200 mA, 500 mV, 1 A, 125 °C

WEEN SEMICONDUCTOR

快速/超快功率二极管, 单, 600 V, 5 A, 1.9 V, 35 ns, 66 A

DIODES INC.

单管二极管 齐纳, 10 V, 500 mW, SOD-123, 6 %, 2 引脚, 150 °C

DIODES INC.

单管二极管 齐纳, 精准, 3.6 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C