规格：汽车质量标准 -,
INFINEON
单晶体管, IGBT, 48 A, 1.6 V, 250 W, 600 V, TO-263, 2 引脚
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -250 V, 4 MHz, 200 W, -16 A, 20 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.1 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.55 V, 454 W, 1.2 kV, TO-247, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 60 V, 0.021 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 1.2 kV, 8 A, 1.25 V, 50 ns, 80 A
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 33 V, 1 W, DO-41 (DO-204AL), 5 %, 2 引脚, 200 °C
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 1SMA59xxB系列, 62 V, 3 W, DO-214AA, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -140 V, 10 MHz, 120 W, -12 A, 35 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220
(EN)
NTE ELECTRONICS
快速恢复二极管, 1A, 1KV, DO-41
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 1.56 W, 1 A, 30 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.65 V, 167 W, 600 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -18.5 A, -60 V, 0.12 ohm, -5 V, -1.5 V
(EN)
