NXP

场效应管, P沟道, DMOS FET, -300V, -210mA, 3-SOT-223

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V

TAIWAN SEMICONDUCTOR

肖特基整流器, 45 V, 20 A, 双共阴极, TO-220AB, 3 引脚, 840 mV

ON SEMICONDUCTOR

双极晶体管

ON SEMICONDUCTOR

单晶体管, IGBT, 60 A, 2.4 V, 394 W, 1.35 kV, TO-247, 3 引脚

VISHAY

DIODE, STANDARD RECOVERY, 1A, 200V, DO-213AB-2

SOLID STATE

射频硅晶体管, NPN, TO-39

ROHM

单晶体管 双极, 高速, NPN, 32 V, 250 MHz, 200 mW, 500 mA, 120 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 100 V, 70 W, 12 A, 750 hFE

INFINEON

晶体管, MOSFET, N沟道, 100 A, 150 V, 6.2 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V

VISHAY

肖特基整流器

VISHAY

场效应管阵列, MOSFET, N/P沟道, 30V, SOIC

VISHAY

肖特基整流器, 双共阴极, 30 V, 8 A, TO-277A, 3 引脚, 540 mV

STMICROELECTRONICS

小信号肖特基二极管, 单, 100 V, 30 A, 870 mV, 530 A, 150 °C

STMICROELECTRONICS

小信号肖特基二极管, 双共阴极, 100 V, 40 A, 780 mV, 530 A, 150 °C

NEXPERIA

单管二极管 齐纳, 3 V, 500 mW, SOD-323F, 2 %, 2 引脚, 150 °C

VISHAY

单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 2 引脚, 175 °C

ROHM

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 500 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 80 A, 1.9 V, 349 W, 600 V, TO-247AB, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V

TAIWAN SEMICONDUCTOR

快速/超快二极管, 400 V, 1 A, 单, 1 V, 50 ns, 30 A

MULTICOMP

单管二极管 齐纳, 20 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C

DIODES INC.

单管二极管 齐纳, 7.5 V, 3 W, DO-214AA, 5 %, 2 引脚, 150 °C

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3