ON SEMICONDUCTOR

快速/超快功率二极管, 单, 800 V, 8 A, 1.8 V, 100 ns, 100 A

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V

NTE ELECTRONICS

达林顿晶体管, NPN, 80V, TO-3

STMICROELECTRONICS

小信号肖特基二极管, 双共阴极, 120 V, 40 A, 790 mV, 220 A, 150 °C

VISHAY

齐纳二极管, 51V, 500mW, SOD-123

NEXPERIA

单管二极管 齐纳, 12 V, 1.5 W, SOT-223, 5 %, 4 引脚, 150 °C

PANASONIC ELECTRONIC COMPONENTS

二极管 小信号, 双系列, 80 V, 65 mA, 1.2 V, 3 ns, 325 mA

MICROCHIP

晶体管, MOSFET, N沟道, 175 mA, 300 V, 12 ohm, 0 V

VISHAY

晶体管, MOSFET, N沟道, 47 A, 500 V, 78 mohm, 10 V, 5 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 28A

NTE ELECTRONICS

齐纳二极管, 1W, 12V, 轴向引线

STMICROELECTRONICS

晶体管, IGBT, TO247

STMICROELECTRONICS

场效应管, MOSFET, 双N沟道, 60V, SOIC

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 47 kohm, 22 kohm

VISHAY

放大器, JFET, N沟道

MULTICOMP

双极性晶体管, NPN, 12V

IXYS SEMICONDUCTOR

小信号肖特基二极管, 双共阴极, 100 V, 35 A, 740 mV, 320 A, 125 °C

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

VISHAY

晶体管, MOSFET, P沟道, 13 A, -100 V, 200 mohm, -10 V, -4 V

ON SEMICONDUCTOR

快速/超快功率二极管, 单, 800 V, 4 A, 1.85 V, 100 ns, 70 A

ON SEMICONDUCTOR

单晶体管, IGBT, 50 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚

ROHM

晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 5 V

ROHM

晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V

VISHAY

晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V

STMICROELECTRONICS

二极管, 碳化硅肖特基, 双共阴极, 1.2 kV, 40 A, 129 nC, TO-247