VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V

VISHAY

晶体管, MOSFET, 沟槽式FET, N沟道, 11 A, 60 V, 0.008 ohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, NPN, 45 V, 250 MHz, 350 mW, 100 mA, 310 hFE

ON SEMICONDUCTOR

单管二极管 齐纳, 通用, 5.6 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C

NEXPERIA

单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110 hFE

IXYS SEMICONDUCTOR

快速/超快二极管, 外延二极管(FRED), 单, 300 V, 10 A, 980 mV, 35 ns, 100 A

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 60V, 172A, TO-247AC-3

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 40A

ROHM

小信号肖特基二极管, 双隔离, 45 V, 30 mA, 370 mV, 200 mA, 125 °C

VISHAY

场效应管, MOSFET, N沟道, 30V, 16A, SOIC

VISHAY

晶体管, MOSFET, 沟槽式FET, P沟道, -8 A, -60 V, 0.092 ohm, -10 V, -3 V

STMICROELECTRONICS

二极管, 碳化硅肖特基, 双共阴极, 1.2 kV, 10 A, 36 nC, TO-247

STMICROELECTRONICS

快速/超快功率二极管, 单, 600 V, 30 A, 1.85 V, 70 ns, 160 A

IXYS SEMICONDUCTOR

晶体管, MOSFET, HiPerFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.12 ohm, -10 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 8 A, 750 hFE

ON SEMICONDUCTOR/FAIRCHILD

齐纳二极管

INFINEON

晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 60V, 12A, DPAK-3

NTE ELECTRONICS

达林顿晶体管, NPN, 120V, TO-3

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 4.7 kohm, 4.7 kohm

ROHM

双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.0123 ohm, 10 V, 2.5 V

ROHM

标准恢复二极管, 双隔离, 400 V, 500 mA, 1.1 V, 8 A

ROHM

晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V