INFINEON

单晶体管, IGBT, 40 A, 2.05 V, 303 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 140 A, 75 V, 7 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, HiPerFET, N沟道, 52 A, 300 V, 60 mohm, 10 V, 4 V

NTE ELECTRONICS

双极晶体管

NTE ELECTRONICS

标准二极管, 6A, 100V, 轴向引线

NEXPERIA

肖特基整流器, 单, 1 A, SOD-993, 2 引脚, 625 mV

NEXPERIA

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm

ROHM

双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0125 ohm, 4.5 V, 1.5 V

ROHM

单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚

TAIWAN SEMICONDUCTOR

快速/超快功率二极管, 800 V, 1 A, 单, 1.7 V, 75 ns, 30 A

BROADCOM LIMITED

二极管, 射频/PIN, 3 ohm, 50 V, SOT-25, 5引脚, 0.22 pF

NEXPERIA

单管二极管 齐纳, 2.4 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C

INFINEON

晶体管, MOSFET, N沟道, 90 A, 60 V, 3.3 mohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE

NEXPERIA

二极管 小信号, 双系列, 100 V, 150 mA, 1.25 V, 4 ns, 4 A

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 100 V, 33 W, 12 A, 1000 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 40 V, 2400 μohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, 通用, N沟道, 170 A, 60 V, 5.6 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, TO-220AB

INFINEON

单晶体管, IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-263, 3 引脚

INFINEON

单晶体管, IGBT, 140 A, 1.7 V, 454 W, 600 V, TO-247AC, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 75 A, 100 V, 25 mohm, 10 V, 5.5 V