规格：汽车质量标准 -,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 2A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 31 A, 1.8 V, 155 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 15 A, 1.65 V, 105 W, 650 V, TO-220, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 100 V, 3 A, 单, DO-214AB, 2 引脚, 790 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 50 hFE
(EN)
NTE ELECTRONICS
晶体管, PNP, TO-3封装
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
VISHAY
肖特基整流器, 2A 30V DO-214AA
(EN)STMICROELECTRONICS
肖特基整流器, 双共阴极, 100 V, 15 A, TO-220AB, 3 引脚, 800 mV
(EN)
STMICROELECTRONICS
Silicon Carbide Schottky Diode, 600V Series, Single, 600 V, 10 A, 12 nC, TO-220AC
(EN)
STMICROELECTRONICS
标准恢复二极管, 单, 600 V, 2 A, 1.9 V, 50 ns, 28 A
(EN)
THAT CORPORATION
双极晶体管阵列, 低噪, PNP, -40 V, -20 mA, 75 hFE, DIP
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 2.6 A, -30 V, 110 mohm, 10 V, -1 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 3.3 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 0.039 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
小信号二极管, 85V, 200mA
(EN)
