
DIODES INC.
单管二极管 齐纳, 2.7 V, 500 mW, SOD-123, 7 %, 2 引脚, 150 °C

NEXPERIA
单管二极管 齐纳, 12 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C

NEXPERIA
单管二极管 齐纳, 13 V, 400 mW, SOD-80C, 5 %, 2 引脚, 200 °C

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75A, TO-247

INFINEON
单晶体管, IGBT, 85 A, 2.3 V, 350 W, 600 V, TO-274AA, 3 引脚

INFINEON
单晶体管, IGBT, 80 A, 3.5 V, 595 W, 1.2 kV, TO-274AA, 3 引脚

ON SEMICONDUCTOR
单管二极管 齐纳, 8.36 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR
单管二极管 齐纳, 4.7 V, 500 mW, SOD-523, 2 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR
单管二极管 齐纳, 33 V, 225 mW, SOT-23, 5 %, 3 引脚, 150 °C

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

NTE ELECTRONICS
小信号双极性晶体管

NTE ELECTRONICS
双极性晶体管, TO-3P

ROHM
二极管, 碳化硅肖特基, 屏障, 1200V系列, 单, 1.2 kV, 20 A, 65 nC, TO-220AC

VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0058 ohm, 10 V, 2 V

MULTICOMP
肖特基二极管, 3A, 40V, SMA