PANASONIC ELECTRONIC COMPONENTS

DIODE, ULTRAFAST RECOVERY, 500mA, 25V, SMINI2-F5-B

MULTICOMP

齐纳二极管, 4.7V, 200mW, SOD-323

VISHAY

晶体管, P沟道

VISHAY

晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V

VISHAY

场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW

NXP

晶体管, BISS, NPN, 60V, 3A, 6-SOT-457

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V

INFINEON

场效应管, MOSFET

NEXPERIA

双极性晶体管阵列, 双路NPN, 45V, 500mA, 6-SOT-457

INFINEON

场效应管, MOSFET, N沟道, 100A, 60V, 3.6W

PANASONIC ELECTRONIC COMPONENTS

DIODE, ZENER, 1W, 3.6V, MINI2-F3-B

NEXPERIA

二极管阵列 齐纳, 68 V, 300 mW, -55 °C, 150 °C, SOT-23

VISHAY

MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8

INFINEON

晶体管 双极-射频, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 hFE

VISHAY

肖特基整流二极管阵列, 双路 共阴极, 30A, TO-263AB

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V

VISHAY

快速二极管, 2A, 100V, DO-204AC

VISHAY

MOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6

NEXPERIA

单晶体管 双极, NPN, PNP, 30 V, 165 MHz, 2 W, 1 A, 180 hFE

VISHAY

齐纳二极管, 13V, 350mW, SOT223

VISHAY

晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V

VISHAY

单管二极管 齐纳, 18 V, 2.3 W, DO-219AB, 2 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2

INFINEON

晶体管 双极-射频, NPN, 4.2 V, 47 GHz, 160 mW, 45 mA, 160 hFE

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V