NEXPERIA

单晶体管 双极, PNP, -60 V, 110 MHz, 1.35 W, -6 A, 20 hFE

NXP

射频宽带晶体管, NPN, 5V, 5GHZ, 3-SOT-23

INFINEON

场效应管阵列, MOSFET, 双P沟道, -30V, -2.3A, 6-PQFN

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V

NXP

双极性晶体管, 中功率, PNP, -45V, -1A, 4-SOT-223

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8

VISHAY

单管二极管 齐纳, 15 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

INFINEON

晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V

VISHAY

开关二极管, 1.5A 400V DO-214AA

INFINEON

场效应管, MOSFET

VISHAY

Transistor Polarity:N Channel

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 60V, 48A TO-220AB

MULTICOMP

单管二极管 齐纳, 39 V, 200 mW, SOD-323, 2 引脚, 150 °C

MULTICOMP

单管二极管 齐纳, 16 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

MULTICOMP

单管二极管 齐纳, 30 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

MULTICOMP

单管二极管 齐纳, 6.2 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

MULTICOMP

快速/超快二极管, 100 V, 2 A, 单, 950 mV, 35 ns, 50 A

MULTICOMP

快速/超快二极管, 50 V, 3 A, 单, 950 mV, 35 ns, 100 A

MULTICOMP

快速/超快二极管, 50 V, 1 A, 单, 1 V, 50 ns, 30 A

VISHAY

肖特基整流二极管

MULTICOMP

快速/超快功率二极管, 800 V, 1 A, 单, 1.7 V, 75 ns, 30 A

STMICROELECTRONICS

单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-247, 3 引脚

NEXPERIA

单管二极管 齐纳, 20 V, 1.5 W, SOT-223, 5 %, 4 引脚, 150 °C