ROHM

单管二极管 齐纳, 外延平面, 2.4 V, 200 mW, SOD-323F, 2 引脚, 150 °C

NEXPERIA

肖特基整流器, 双共阳极, 60 V, 1 A, SOT-223, 4 引脚, 650 mV

MULTICOMP

快速/超快功率二极管, 400 V, 1 A, 单, 1.3 V, 50 ns, 30 A

INFINEON

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3 V

ON SEMICONDUCTOR

双极性晶体管, PNP -60V TO-220

VISHAY

晶体管, MOSFET, N沟道, 22 A, 500 V, 0.185 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 30V, 11A, SOIC

ROHM

单管二极管 齐纳, 外延平面, 15 V, 150 mW, SOD-523, 2 引脚, 150 °C

NEXPERIA

晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V

MULTICOMP

二极管, 超快恢复型, 125mA, 85V, SOT-23-3

STMICROELECTRONICS

小信号肖特基二极管, 双共阴极, 100 V, 40 A, 810 mV, 530 A, 150 °C

VISHAY

晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V

DIODES INC.

单晶体管 双极, 高增益, NPN, 12 V, 260 MHz, 350 mW, 5 A, 800 hFE

INFINEON

场效应管, MOSFET

VISHAY

场效应管, MOSFET, N沟道, 36W, TO-220AB

ON SEMICONDUCTOR/FAIRCHILD

二极管, 碳化硅肖特基, 双共阴极, 1.2 kV, 30 A, 95 nC, TO-247

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 场截止沟道, 150 A, 1.6 V, 455 W, 650 V, TO-247, 4 引脚

VISHAY

晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V

VISHAY

晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 45A

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, N通道, 80 A, 2.3 V, 428 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR

DIODE, SMALL SIGNAL, 200mA, 40V, SOD-923-2

INFINEON

单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚

ROHM

单管二极管 齐纳, 外延平面, 30 V, 150 mW, SOD-523, 2 引脚, 150 °C

NEXPERIA

双极性晶体管, MED POWER, NPN, 60V, 1A