ON SEMICONDUCTOR

单晶体管, IGBT, 80 A, 2 V, 260 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS

快速/超快功率二极管, 单, 1 kV, 3 A, 1.7 V, 75 ns, 55 A

TAIWAN SEMICONDUCTOR

单管二极管 齐纳, 56 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C

ON SEMICONDUCTOR/FAIRCHILD

齐纳二极管

INFINEON

晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V

RAYCHEM - TE CONNECTIVITY

单管二极管 齐纳, 9.8 V, 700 mW, SMD, 3 引脚, 85 °C

ROHM

单晶体管 双极, PNP, 32 V, 100 MHz, 1 W, 2 A, 82 hFE

VISHAY

晶体管, P沟道

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V

INTERNATIONAL RECTIFIER

晶体管, IGBT, 600V, 96A

NXP

射频晶体管, NPN

INFINEON

晶体管, IGBT, 1.65V, 36A

MULTICOMP

单管二极管 齐纳, 24 V, 1 W, DO-41, 5 %, 2 引脚, 150 °C

INFINEON

场效应管, MOSFET, N沟道, HEXFET, 30V, 8.2A, TSOP-6

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 2.2 kohm

VISHAY

肖特基整流器, 双共阴极, 100 V, 40 A, D-61, 3 引脚, 810 mV

NTE ELECTRONICS

晶体管, BJT, NPN, 140V V(BR)CEO, 16A I(C), TO-3

VISHAY

单管二极管 齐纳, 12 V, 800 mW, DO-219AB, 2 引脚, 175 °C

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

晶体管, IGBT, 1.95V, 60A, TO-247AD-3

LITTELFUSE

单管二极管 齐纳, 5 W, 轴向引线, 2 引脚, 175 °C

INFINEON

单晶体管, IGBT, 24 A, 1.55 V, 140 W, 600 V, TO-263, 2 引脚

ON SEMICONDUCTOR/FAIRCHILD

单管二极管 齐纳, 3.3 V, 500 mW, SOD-123, 2 引脚, 150 °C