TAIWAN SEMICONDUCTOR

单管二极管 齐纳, 8.2 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C

VISHAY

晶体管, MOSFET, 沟槽式FET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -12 A, -60 V, 0.047 ohm, -10 V, -2.6 V

VISHAY

DIODE, SCHOTTKY, 30A, 100V, TO-263AB-2

MOSPEC

快速/超快二极管, 双共阳极, 200 V, 15 A, 975 mV, 35 ns, 300 A

VISHAY

肖特基整流器, 双共阴极, 60 V, 6 A, TO-252, 3 引脚, 470 mV

TAIWAN SEMICONDUCTOR

标准恢复二极管, 400 V, 4 A, 单, 1.15 V, 1.5 μs, 100 A

INFINEON

晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, NPN, 100 V, 130 MHz, 1.2 W, 4 A, 200 hFE

INFINEON

单晶体管, IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 引脚

NEXPERIA

二极管阵列 齐纳, 4.7 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663

VISHAY

快速/超快二极管, 双共阴极, 200 V, 30 A, 950 mV, 35 ns, 300 A

TAIWAN SEMICONDUCTOR

单管二极管 齐纳, 51 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C

MULTICOMP

肖特基整流器, 100 V, 5 A, 单, DO-15, 2 引脚, 750 mV

ON SEMICONDUCTOR/FAIRCHILD

单管二极管 齐纳, 3.3 V, 200 mW, SOD-323F, 5 %, 2 引脚, 150 °C

NEXPERIA

单管二极管 齐纳, 33 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C

NEXPERIA

双极晶体管阵列, 通用, PNP, 45 V, 200 mW, 100 mA, 290 hFE, SOT-363

DIODES INC.

单晶体管 双极, NPN, 50 V, 115 MHz, 1.1 W, 4 A, 450 hFE

NEXPERIA

二极管阵列 齐纳, 3 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663

ON SEMICONDUCTOR/FAIRCHILD

单管二极管 齐纳, 3.3 V, 200 mW, SOD-523F, 2 引脚, 150 °C

NEXPERIA

单晶体管 双极, NPN, 300 V, 1.2 W, 100 mA, 40 hFE

DIODES INC.

晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0017 ohm, 10 V, 3 V