
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V

NEXPERIA
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.027 ohm, -4.5 V, -700 mV

ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.04 电阻比率

ON SEMICONDUCTOR
二极管 小信号, 双系列, 70 V, 215 mA, 1.25 V, 3 μs, 2 A

ROHM
单管二极管 齐纳, AEC-Q101, 24 V, 200 mW, SOD-323FL, 2 引脚, 150 °C

VISHAY
单管二极管 齐纳, AEC-Q101, 8.2 V, 3.25 W, SOD-57, 5 %, 2 引脚, 175 °C

ON SEMICONDUCTOR
双极晶体管阵列, AEC-Q101, 双PNP, -65 V, 380 mW, -100 mA, 0.9 hFE, SOT-363

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 100 V, 110 MHz, 490 mW, 2 A, 40 hFE

ON SEMICONDUCTOR
齐纳二极管, 500mW, 5.1V, SOD-123

STMICROELECTRONICS
肖特基整流器, AEC-Q101, 40 V, 3 A, 单, DO-214AB, 2 引脚, 500 mV

INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.028 ohm, 10 V, 1.6 V

VISHAY
单管二极管 齐纳, 24 V, 500 mW, MicroMELF, 5 %, 2 引脚, 175 °C

DIODES INC.
晶体管, MOSFET, N沟道, 13 A, 40 V, 0.0085 ohm, 10 V, 4 V

DIODES INC.
晶体管, MOSFET, N沟道, 44 A, 100 V, 0.011 ohm, 10 V, 2 V

DIODES INC.
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.015 ohm, 10 V, 2.5 V

INFINEON
晶体管, MOSFET, P沟道, -85 A, -40 V, 0.0073 ohm, -10 V, -3 V

ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 85 MHz, 20 W, 8 A, 40 hFE

ON SEMICONDUCTOR
肖特基整流器, 40 V, 2 A, 单, DO-214AA, 2 引脚, 500 mV

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 98 A, 60 V, 0.0044 ohm, 10 V, 4 V

ON SEMICONDUCTOR
快速/超快二极管, 200 V, 2 A, 875 mV, 35 ns, 40 A

VISHAY
齐纳二极管, 500mW, 3.3V, SOD-80

VISHAY
单管二极管 齐纳, 7.5 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C