NEXPERIA

双极晶体管阵列, AEC-Q101, NPN, PNP, 45 V, 230 mW, 100 mA, 200 hFE, DFN1010B

ROHM

单管二极管 齐纳, AEC-Q101, 5.1 V, 500 mW, SOD-323HE, 2 引脚, 150 °C

INFINEON

晶体管, MOSFET, P沟道, -8.83 A, -60 V, 0.23 ohm, -6.2 V, -3 V

NEXPERIA

单晶体管 双极, AEC-Q101, PNP, -100 V, 90 MHz, 1.5 W, -10 A, 10 hFE

VISHAY

单管二极管 齐纳, 30 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C

NEXPERIA

肖特基整流器, 60 V, 3 A, 单, SOT-1289, 3 引脚, 530 mV

VISHAY

单管二极管 齐纳, 5.1 V, 500 mW, SOD-80 (迷你MELF), 2 %, 2 引脚, 175 °C

INFINEON

晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0018 ohm, 10 V, 1.5 V

INFINEON

晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V

VISHAY

单管二极管 齐纳, 18 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C

NEXPERIA

晶体管, MOSFET, N沟道, 17 A, 60 V, 0.037 ohm, 10 V, 1.7 V

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 2.5 V

VISHAY

单管二极管 齐纳, 3.3 V, 500 mW, SOD-80 (迷你MELF), 2 %, 2 引脚, 175 °C

INFINEON

双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V

VISHAY

齐纳二极管, 500mW, 6.8V, SOD-80

VISHAY

单管二极管 齐纳, 47 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C

ROHM

单管二极管 齐纳, 7.5 V, 1 W, SOD-123FL, 2 引脚, 150 °C

INFINEON

场效应管, MOSFET, P沟道, -20V, -1.5A, SOT-363-6

INFINEON

晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.101 ohm, -10 V, -3 V

INFINEON

晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V

ROHM

单管二极管 齐纳, AEC-Q101, 22 V, 1 W, SOD-123, 2 引脚, 150 °C

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 22 kohm, 22 kohm, 1 电阻比率

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, Dual NPN, 45 V, 100 MHz, 380 mW, 100 mA, 150 hFE