
INFINEON
二极管 小信号, AEC-Q101, 双隔离, 75 V, 200 mA, 1.1 V, 600 ns, 4.5 A

VISHAY
二极管 小信号, AEC-Q101, 单, 200 V, 250 mA, 1 V, 50 ns, 1 A

VISHAY
二极管 小信号, AEC-Q101, 单, 250 V, 250 mA, 1 V, 50 ns, 1 A

NEXPERIA
双极晶体管阵列, AEC-Q101, NPN, PNP, 45 V, 230 mW, 100 mA, 200 hFE, DFN1010B

NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 350 mW, 100 mA, 200 hFE, DFN1010B

ROHM
单晶体管 双极, PNP, -45 V, 250 MHz, 350 mW, -100 mA, 210 hFE

ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -45 V, 100 MHz, 380 mW, -100 mA, 270 hFE

ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -45 V, 100 MHz, 380 mW, -100 mA, 270 hFE

NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -45 V, 350 mW, -100 mA, 200 hFE, DFN1010B

INFINEON
单晶体管 双极, NPN, 60 V, 100 MHz, 3 W, 3 A, 85 hFE

INFINEON
单晶体管 双极, NPN, 60 V, 100 MHz, 3 W, 3 A, 85 hFE

INFINEON
晶体管 双极-射频, NPN, 4.5 V, 40 GHz, 200 mW, 50 mA, 110 hFE

INFINEON
晶体管 双极-射频, NPN, 4.5 V, 42 GHz, 500 mW, 150 mA, 100 hFE

INFINEON
晶体管 双极-射频, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, 160 hFE

INFINEON
晶体管 双极-射频, NPN, 15 V, 5 GHz, 280 mW, 45 mA, 100 hFE

INFINEON
晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 70 hFE

INFINEON
场效应管, MOSFET, P沟道, -30V, -100A, TDSON-8

INFINEON
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V

INFINEON
场效应管, MOSFET, P沟道, -30V, -22.5A, TDSON-8

INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V

INFINEON
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV

INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V

INFINEON
晶体管, MOSFET, N沟道, 120 mA, 240 V, 20 ohm, 10 V, -1.4 V

INFINEON
晶体管, MOSFET, N沟道, 480 mA, 200 V, 3.5 ohm, 10 V, -1.4 V

INFINEON
晶体管, MOSFET, P沟道, 1.45 A, -60 V, 400 mohm, -10 V, 1.5 V