NXP

晶体管, JFET, JFET, 30 V, 6 mA, 15 mA, 7.5 V, SOT-23, JFET

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

ROHM

快速/超快功率二极管, 600 V, 5 A, 单, 1.7 V, 30 ns, 50 A

NEXPERIA

二极管阵列 齐纳, 9.1 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663

INFINEON

Silicon Carbide Schottky Diode, thinQ 5G 650V Series, Single, 650 V, 20 A, 29 nC, TO-247

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm

ROHM

快速/超快二极管, 200 V, 6 A, 双共阴极, 980 mV, 25 ns, 40 A

STMICROELECTRONICS

Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC, TO-247

ROHM

二极管阵列 齐纳, Bidirectional, 33 V, 200 mW, -55 °C, 150 °C, SOT-323

STMICROELECTRONICS

Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 8 A, 23.5 nC, TO-263

ROHM

二极管阵列 齐纳, Bidirectional, 6.8 V, 200 mW, -55 °C, 150 °C, SOT-323

ON SEMICONDUCTOR/FAIRCHILD

快速/超快二极管, 双共阴极, 200 V, 30 A, 1 V, 45 ns, 325 A

INFINEON

快速/超快功率二极管, 单, 650 V, 40 A, 1.35 V, 77 ns, 320 A

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 9 V, SOT-23, JFET

STMICROELECTRONICS

Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

VISHAY

快速/超快功率二极管, 超快, 单, 600 V, 15 A, 3.4 V, 30 ns, 120 A

IXYS SEMICONDUCTOR

快速/超快功率二极管, 双共阴极, 600 V, 30 A, 1.6 V, 35 ns, 300 A

ROHM

快速/超快功率二极管, 600 V, 10 A, 单, 2.8 V, 25 ns, 60 A

ROHM

快速/超快二极管, 430 V, 10 A, 单, 1.7 V, 25 ns, 80 A

VISHAY

快速/超快功率二极管, 单, 600 V, 8 A, 2.4 V, 22 ns, 90 A

STMICROELECTRONICS

快速/超快二极管, 双共阴极, 200 V, 30 A, 1.4 V, 25 ns, 140 A

NEXPERIA

二极管阵列 齐纳, 5.1 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663

ROHM

快速/超快二极管, 350 V, 20 A, 单, 1.35 V, 35 ns, 100 A

ON SEMICONDUCTOR

快速/超快二极管, 双共阴极, 200 V, 16 A, 975 mV, 35 ns, 100 A