规格：阈值电压 Vgs 2.5V,
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 90A, TO-263-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 94 A, 30 V, 0.0047 ohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 18A, POWERPAK 1212-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.027 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, 双路, N通道, 场效应管, MOSFET, 30V, 8.5A
(EN)
ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.35 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, TO-220-3
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 500 mA, 60 V, 1.3 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 4.5 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 30V, 93A TO-263AB
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 39 A, 40 V, 0.005 ohm, 10 V, 2.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
