规格：阈值电压 Vgs 2.8V,
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.0439OHM, 16A,
(EN)
NXP
场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0034 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V
(EN)
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 40 V, 700 μohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 40 V, 700 μohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0033 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0033 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
(EN)
