规格：阈值电压 Vgs 1.1V,
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 100 mA, 20 V, 3 ohm, 4 V, 1.1 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -20 V, 8 ohm, -4 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 27 A, 20 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 5.1 A, 20 V, 0.041 ohm, 4.5 V, 1.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.00205 ohm, 10 V, 1.1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 7.3 A, 30 V, 0.0175 ohm, 10 V, 1.1 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.00165 ohm, 10 V, 1.1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 500 mA, 20 V, 0.99 ohm, 8 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.9 mohm, 8 V, 1.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, Trench, 双N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道与P沟道, 20V, 0.18Ω, 700mA, SC-70-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
