规格：阈值电压 Vgs 1.1V,
VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.5 mohm, 8 V, 1.1 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, 16A, POWERPAIR-6
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 25A, POWERPAK SO-8
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道 + 肖特基, 16 A, 30 V, 0.0075 ohm, 10 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V
(EN)VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 218 A, 30 V, 0.0009 ohm, 10 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 97A
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 100A
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
