规格：阈值电压 Vgs 3.5V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0019 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 3.5 V
(EN)
TOSHIBA
功率场效应管, MOSFET, 通用, N沟道, 8 A, 1 kV, 1.5 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0025 ohm, 10 V, 3.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
(EN)
