规格：阈值电压 Vgs 1V,
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 2.2 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N+P沟道, 20V, SOT-563
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 12.5 mohm, 10 V, 1 V
(EN)
NEXPERIA
场效应管, MOSFET阵列, 双路N 通道, 20V, 860MA, 6-sot-363
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.29 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 180 mA, 20 V, 1.4 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 930 mA, 30 V, 0.38 ohm, 4.5 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 130 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.8 mohm, 10 V, 1 V
(EN)
