规格：阈值电压 Vgs 1V,
ROHM
晶体管, MOSFET, N沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 20 V, 0.008 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)
VISHAY
MOSFET, N CH, 20V, 19.8A, SOIC-8
(EN)
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, N沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 30 V, 8 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 0.03 ohm, 10 V, 1 V
(EN)
