规格：阈值电压 Vgs 1V,
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, 双路, N通道, 场效应管, MOSFET, 30V, 微型8, 整卷
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 25 mohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 25 mohm, 4.5 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 3.7 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 3.7 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 19 A, 55 V, 0.042 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, Micro-3, 30V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 100 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N通道, 30V, 3.2A, 微型6, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.29 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)
